Flash memory cell for high efficiency programming

ABSTRACT

A flash memory cell comprises a gate, a drain, a source, a floating gate, and a control gate. The flash memory cell is capable of being programmed by inducing a voltage drop of between about four volts and six volts across a deep-depletion region by applying a first voltage to the gate, a second voltage to the drain, and a third voltage to the source. During a programming operation, the channel current is approximately zero, and the first voltage is ramped at a rate proportional to the injection current.

This application is a Divisional of U.S. Application No. 09/466,269,filed Dec. 17, 1999, now U.S. Pat. No. 6,272,047, issued on Aug. 7,2001.

FIELD OF THE INVENTION

This invention relates to nonvolatile memories, and more specifically toflash electrically erasable programmable memory (EEPROM) devices.

BACKGROUND OF THE INVENTION

The standard programming method, hot channel electron injection, for aflash EEPROM cell requires a cell current on the order of 200-500micro-amperes. A high cell current is required due to the poorefficiency of the injection mechanism and makes simultaneous programmingof a large number of cells in a flash memory array impractical. Theunmet need for fast and controllable programming of a flash cell using alow current has long been recognized by many workers in the field.

Yeh, in U.S. Pat. No. 5,029,130, describes a method for high efficiencyprogramming using source-side hot electron injection with a cell currentof about 1 micro-ampere. Yeh's method allows simultaneous programming,in a time of between 0.1 milliseconds and 10 milliseconds, of all cellson a row of a memory array to an arbitrary pattern (page write).However, a larger cell size is required to accommodate source-sideinjection, and the larger cell size increases the complexity of thefabrication process over that which is required in the fabrication ofthe standard flash EEPROM.

Haddad, in U.S. Pat. No. 5,491,657, describes a programming method usingthe band-to-band generated current of the drain-to-substrate junction.In general, Haddad's method applies to a cell with a structure similarto the standard flash EEPROM. However, Haddad's cell array is placedinside a triple well (P well surrounded by N well). Haddad alsodescribes programming a cell in between 1 and 100 milliseconds with acell current of below 1 micro-ampere. This allows simultaneousprogramming of a plurality of cells in a memory array. However, sinceHaddad's method requires different gate voltage conditions for the 0state versus the 1 state, programming of all cells on a row of thememory array to an arbitrary pattern (page write) is not possible. Inaddition, in a selective data write operation, the band-to-bandtunneling process generates both electrons and holes that could beinjected with high efficiency into the floating gate, which woulddisturb the data stored at unselected locations (on selected column andunselected rows) in the memory array. This makes the method inapplicableto the user-mode write function found in a standard device, and usefulonly in test modes for simultaneous writing of specialized symmetricalpatterns of data to an entire memory array or block.

Chen describes a cell structure and biasing method that may allow theband-to-band generated current in a flash memory cell to be selectivelyturned on and off at specific locations in a memory array, thus makingthis low current programming mechanism applicable to the standarduser-mode write functions. I. C. Chen et al., Band-to-band tunnelinginduced substrate hot-electron (BISHE) injection: A new programmingmechanism for nonvolatile memory devices, 1989 International ElectronDevices Meeting Technical Digest—International Electron Devices Meeting,263-266 (1989). However, the cell structure described by Chen uses alarge area, a relatively thick programming dielectric (SiO₂) layer, anda large bias voltage, which makes the cell structure unsuitable for useas a replacement for the flash EEPROM devices in use today. Chen'sdescription is limited to the physical programming mechanism, and doesnot describe the operation of the proposed cell in performing otherfunctions, such as electrical erase, read 1 (erase state) and aparticular type of write disturb present in such a memory array, whichwill be described below. Proper operation in all these functions isrequired in a flash EEPROM device and will be demonstrated for the cellproposed in this invention.

Chen also describes a design using a programming dielectric of about 100Å that was rejected due to the potential write disturb byFowler-Nordheim injection in unselected cells (columns) along the samerow with the cell to be programmed. According to the bias schemeproposed by Chen, programming is achieved by applying 4 volts on thedrain of the cells to be programmed, 0 volts on the drain of the cellsto remain erased, and floating the common source. Chen apparentlyignored the fact that, as the drain diffusion is raised to 4 volts andthe floating gate coupled to about 10 volts or more in the cells to beprogrammed, the floating source could also rise to an uncontrolledvoltage level. For the symmetrical source/drain structure described byChen, the source junction could generate as much band-to-band current inany cell as the drain junction. This band-to-band current generated inthe source junction together with the current required to charge thesource junction capacitance represents an undesirable power drain on thesupply (pump) used to provide current for the programming function.Furthermore, if the source potential rises to about 3 volts or more,band-to-band current induced electron injection, which is the samemechanism used to program the selected cells, may cause disturb in thecells intended to remain erased on the selected row.

For these and other reasons there is a need for the present invention.

SUMMARY OF THE INVENTION

The above mentioned problems with flash memory cells and other problemsare addressed by the present invention and will be understood by readingand studying the following specification.

A flash memory cell comprises a control gate, a drain region, a sourceregion, and a channel region formed in a common substrate. The flashmemory cell is capable of being programmed by inducing a voltage drop ofbetween about four volts and about six volts across a shallowdeep-depletion region created near the drain region. The voltage drop isinduced by applying a first voltage to the control gate, a secondvoltage to the drain region, and a third voltage to the source region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of some embodiments of a non-volatilememory device of the present invention.

FIG. 2A is a graph of electron energy for band-to-band induced secondaryelectron injection in a floating gate memory cell as a function of celldepth.

FIG. 2B is a graph of electron energy for band-to-band current induceddirect electron injection in a floating gate memory cell as a functionof cell depth.

FIG. 3A is a graph of a two-dimension potential distribution for a writefunction.

FIG. 3B is a graph of vertical potential distribution at selected pointsalong a channel.

FIG. 4 is a schematic diagram of the non-volatile memory device of FIG.1 illustrating the program and erase modes of operation.

FIG. 5 is graph of a ramped control gate voltage signal versus time.

FIG. 6 is a block diagram of a computer system suitable for use inconnection with the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings which form a part hereof,and in which is shown by way of illustration specific preferredembodiments in which the invention may be practiced. These embodimentsare described in sufficient detail to enable those skilled in the art topractice the invention, and it is to be understood that otherembodiments may be utilized and that logical, mechanical and electricalchanges may be made without departing from the spirit and scope of thepresent inventions. The following detailed description is, therefore,not to be taken in a limiting sense, and the scope of the presentinvention is defined only by the appended claims.

Overview

This disclosure will describe a method to modify the industry standardflash cell structure and how it is biased during programming, in orderto greatly enhance its programming efficiency.

Cell Structure

As shown in FIG. 1, the disclosed cell contains a poly gate stack thatis typical for flash memory. Below the silicon surface there are bothsource 112 and drain 115 regions, that are also typical for flashmemory. Surrounding both the source and drain regions are highly dopedregions that are not typical for flash memory. The doping profilessurrounding the source and drain regions, and contained within parts ofthe channel region 118, are some of the improvements made to thestructure of the industry standard flash cell. Surrounding the sourcejunction, is a heavily doped P-type region 127 that extends from theoxide/silicon interface next to the source junction down to a buried,but similarly doped, P-type region 128. This buried P-type regionextends across most of the length of the channel region. The dopingprofile of the channel region 137 is a highly retrograde P-type. Theoxide/silicon surface is lightly doped and approximately equal to thedoping level in lightly doped P-type region 139. Below the oxideinterface, the P-type concentration increases sharply (within 0.1 μm) tothe concentration of the highly doped buried P-type layer. Surroundingthe drain region is a graded phosphorous doped region 136 that thenabuts up to the lightly doped P-type region 139.

The present invention provides an improved physical structure as shownin FIG. 1 and an improved biasing method to implement selectiveprogramming at low current by the band-to-band injection mechanism. Thestructure is compatible with the standard flash EEPROM cell used intoday's memories and is tailored for fast programming at relatively lowbias voltages. The size of the structure is also about equal to the sizeof the standard flash EEPROM cell used in today's memories. The newbiasing scheme improves the margin for disturb and allows the use of athin programming dielectric. All active and passive modes of operationfor this cell in a memory array have been tested by electricalsimulation and shown to work with adequate margin.

Band-to-band current is generated by the formation of a deep-depletionregion near the drain of the selected cell, which extends into a heavilydoped P-type region. In order to prevent the flow of band-to-bandcurrent in unselected cells (rows) along the selected column in a memoryarray, the heavily doped P region is added on the source end of thecell's channel, a certain distance away from the drain. This heavilydoped P region may be created by high angle boron implantation to form a“pocket” around the source diffusion. In order to increase theefficiency of the electron injection process, the cell structure isdesigned to have a retrograde net P-type dopant concentration profile,below the lightly doped side of the channel. This results in highervertical electric field at a certain depth in the deep depletion region,which in turn increases the rate of generation of electrons by thesubstrate current, and by direct band-to-band tunneling. Free electronscreated by either of these two mechanisms, can be accelerated in thevertical field of the channel toward the surface and injected into theoxide with high efficiency as shown in FIG. 2A and FIG. 2B.

For similar reasons, a low horizontal electric field in the channelsurface near the drain diffusion improves injection efficiency for bothinjection mechanisms considered, as the electrons flowing toward thechannel surface have a lower chance of being drawn into the drain andeliminated from the oxide injection process. To reduce the horizontalelectric field near the drain, the heavily doped region of the channelis kept a certain distance away from the edge of the drain diffusion.Furthermore, the cell has a lightly doped extension to the draindiffusion (DDD) similar to the source diffusion in a conventional flashcell, or low doping concentration in the main body of the draindiffusion. These features of the physical structure offer additionaladvantages. First, there is a reduced drain-to-substrate band-to-bandcurrent in unselected cells (rows) along the same column with a cellbeing programmed. Second, there is a higher breakdown voltage for thedrain-to-substrate junction, which allows erasure of a memory block bythe already established method of biasing all cell drains to betweenabout 3 volts and 6 volts, and all word lines to −8 to −12 volts.

The programming dielectric comprises silicon dioxide, nitrided silicondioxide or another dielectric compatible with the standard MOS VLSItechnology. The thickness of the programming dielectric layer is similarto that used in the other flash EEPROM devices of today, in the range ofbetween about 80 angstroms and about 120 angstroms. This allowselectrical erasure by Fowler-Nordheim tunneling, by the biasing methodmentioned above, or by channel erase as will be discussed below. Also,this small oxide thickness allows programming by band-to-band current ata lower gate voltage as described below. One embodiment of a physicalcell structure and a two-dimensional doping concentration suitable forsupporting the features discussed above is shown in FIG. 1.

FIG. 1 is a cross-sectional view of some embodiments of non-volatilememory device 100. Non-volatile memory device 100 comprises flash memorycell 103 including substrate 106 and stack 109.

Substrate 106 is fabricated from a material, such as a semiconductor,that is suitable for use as a substrate in connection with thefabrication of integrated circuits. Substrate 106 includes doped andundoped semiconductors, epitaxial semiconductor layers supported by abase semiconductor or insulator, as well as other semiconductorstructures having an exposed surface with which to form the conductivesystem of the present invention. Substrate 106 refers to semiconductorstructures during processing, and may include other layers that havebeen fabricated thereon. In one embodiment, substrate 106 is fabricatedfrom silicon. Alternatively, substrate 106 is fabricated from germanium,gallium-arsenide, silicon-on-insulator, silicon-on-sapphire, or anyother crystalline or amorphous material suitable for use as a substratein the manufacture of integrated circuits. Substrate 106 is not limitedto a particular material, and the material chosen for the fabrication ofsubstrate 106 is not critical to the practice of the present invention.

Substrate 106 comprises source 112, drain 115, and channel 118 regions.Source 112, in one embodiment, comprises arsenic doped region 124abutting heavily doped boron region 127. Arsenic doped region 124 isformed by masking source 112 and implanting arsenic ions in substrate106 to a depth of about 0.1 micron at a density of about 1×10²⁰atoms/cm³ or higher.

Drain 115, in one embodiment, comprises arsenic doped region 133abutting phosphorous doped region 136. Phosphorous doped region 136abuts lightly doped boron region 139. Arsenic doped region 133 is formedby masking drain 115 and implanting arsenic ions in substrate 106 to adepth of about 0.1 micron at a density of about 1×10²⁰ atoms/cm³ orhigher. Phosphorous doped region 136 is formed by implanting phosphorousions through the same drain mask into the substrate 106 to a depth of0.1 micron and a concentration of about 1×10¹⁹ atoms/cm³. Phosphorousdoped region 136 extends beyond the edge of the arsenic doped region bya margin 142 of about 0.05 microns.

Channel region 118 includes a channel surface and is located betweensource 112 and drain 115 and includes heavily doped boron regions 127and 128 and lightly doped boron region 139. The steep retrograde profileis formed by first implanting boron at a dose of approximately 5×10¹³ions/cm²@ 20 KeV, followed by implanting arsenic at a dose ofapproximately 4×10¹² ions/cm²@ 20 KeV. These implants are performed inplace of the normal threshold adjust implant for the cell. The lightlydoped boron region 139 is doped to a concentration of about 2×10¹⁷atoms/cm³. This lightly doped region forms the junction with thephosphorous doped drain region 136 thus avoiding the low-voltagejunction breakdown commonly associated with high doping levels inchannel 118. Heavily doped net P-type region 127 extends from source 112to within about 0.14 microns from the edge of the lightly doped drain136. The region 127 merges in the depth of the channel with region 128,also heavily doped with boron at the same concentration of 1.5×10¹⁸atoms/cm³. The heavily doped region 128 is located below the lightlydoped region 139 and extends toward the phosphorous-doped drain region136 without joining it. The boundary between the light boron region 139near the surface and the heavy boron region 128 in the depth of thechannel is at about 0.1 micron below the channel surface. Heavy boronregion 128 may be formed by high energy boron ion implantation through amask which exposes the area surrounding the source region 112.

During cell programming, a voltage of about 4 volts is applied on thedrain 115, which creates a depletion region 137 spreading in the lightboron region 139 of the channel 118. In one embodiment, the extent ofspreading of the depletion region 137 is limited by its reaching theboundaries to the heavy boron regions 127 and 128. Thus, the depth 138of depletion region in the channel is about 0.1 micron, about the sameas that of the boundary between the regions 139 and 128. The horizontalextent of spreading of the depletion region is limited by the boundarybetween regions 139 and 127 in the channel 118, and does not reach thesource diffusion 124. Therefore, the potential assumed by the source inprogramming is not determined by the voltage applied on the drain, andcan be set at any convenient value by applying an externally controlledvoltage. As will be shown below, using a source voltage in the range1.5-2.5 volts results in near-zero channel current in programming. Thedrain voltage of about 4 volts creating a shallow deep-depletion region137 in the channel, combined with near-zero channel current permits lowpower and high efficiency programming for the flash memory cell 103.

Stack 109 is located above substrate 106 and comprises gate oxide 145,floating gate 148, dielectric 151, and control gate 154.

Gate oxide 145 is formed above channel 118. In one embodiment, gateoxide 145 is a thermal oxide, such as SiO or SiO₂, formed by oxidizingthe surface of substrate 106. In one embodiment, gate oxide 145 has athickness 157 of between about 80 angstroms and about 120 angstroms anda length 162 of about 0.3 microns. If gate oxide 145 has a thickness 157of less than about 80 angstroms, the probability of charge loss from thefloating gate through direct electron tunneling, resulting in potentialdata retention failure, is increased. If gate oxide 145 thickness 157 islarger than about 120 angstroms, then efficiency of the Fowler-Nordheimtunneling mechanism used in the electrical erase function is decreased.

Floating gate 148 is formed above gate oxide 145. In one embodiment,floating gate 148 is formed from polysilicon deposited to a thickness ofbetween about 500 angstroms and about 5000 angstroms using a chemicalvapor deposition (CVD) process. Floating gate 148, in one embodiment, isdoped to the desired level using phosphorous and/or arsenic diffusion orimplantation. Like in the standard flash memory architecture, thecontrol gates of all cells on the same row in a memory array are mergedin a common polysilicon line named wordline. Floating gate 148accumulates charge from injection current 160 during a programmingoperation and releases charge during an erase operation.

Dielectric 151, in one embodiment, is formed above floating gate 148 toa depth of about 200 angstroms. In the preferred embodiment, dielectric151 has a high capacitance value, a low leakage value, and is formedusing conventional integrated circuit processing methods. Dielectric 151is formed from a single layer of dielectric material or a plurality oflayers of dielectric material.

Control gate 154 is formed above dielectric 151. Control gate 154, inone embodiment, is formed from polysilicon and may include otherconductive materials, such as aluminum, and is deposited to a depth ofbetween about 1500 angstroms and 2000 angstroms. Control gate 154 may bedoped to the desired level through phosphorous diffusion.

Operating Conditions for the Recommended Cell Structure Active Biasing

Effective oxide injection from band-to-band current occurs for a voltageof about 4 volts at the drain diffusion and 9-11 volts across a 150-160angstrom thick programming dielectric. Accordingly, in one embodiment ofthe present invention, the drain diffusion is operated at about 3-5volts with about 6-7 volts across the programming dielectric by scalingdown the dielectric thickness. Considering the other improvements ininjection efficiency for the cell structure of the present invention, asdescribed above, it is anticipated that a successful write operationwill occur in the range of 4-6 volts across the programming dielectric.For a value of about 0.7 for the coefficient of capacitive couplingbetween the floating gate and the control gate, this translates to about7-11 volts for the voltage on the control gate in programming, which isin agreement with the operating conditions for the conventional flashcell.

In one embodiment of the present invention, the common source isactively biased during programming to a voltage of between about 1.5volts and 2.5 volts, which is derived from the main chip power supply.Thus, the capacitance and band-to-band current of the source junction donot load the pumped current supply for the program function. Also, bykeeping the source voltage at a controlled level below about 3 volts,disturb from the band-to-band current of the source is minimized. Sinceeach cell only requires a low current, programming to an arbitrary datapattern occurs simultaneously in all cells along a selected row of thememory array (page mode write function). The same voltage as is on thesource, a voltage of between about 1.5 and 2.5 volts, is activelyapplied on the drains (bitlines) for the cells that are to remainerased. This embodiment has several advantages in that it preventsfurther flow of current from the common source to the drains of thecells that are to remain erased, and also prevents write disturb by theFowler-Nordheim tunneling mechanism to the cells that are to remainerased.

In order to maintain a low current value in programming using anactively biased source, the potential on the floating gates of the cellsselected for programming must not exceed the threshold for conductionfor the given channel doping profile. To ensure that the floating gatepotential is kept at a controlled value during programming, in oneembodiment, a ramped wordline voltage is used in the page writefunction. In this way, the ramp rate controls the floating gatepotential according to the equation:

IF(VF, VD, VS)=C _(G) * dV _(G) /dt.

I_(F) is the gate current arising from the band-to-band injectionmechanism, expressed as a function of floating gate potential V_(F) andvoltages applied on the drain (V_(D)) and source (V_(S)) in programming(assuming the substrate is grounded). C_(G) is the floatinggate-to-control gate capacitance of the cell. V_(G) is the instantaneouscontrol gate (wordline) voltage, and dV_(G)/dt is the ramp rate for thewordline voltage.

In turn, the floating gate potential during programming, along with thedrain and source voltages defined above, controls the cell current:

ID=ID(VF, VD, VS).

The duration of the programming function depends on the ramp rate of thewordline voltage. According to the equation shown above, the ramp ratehas to match the effective gate injection current, IF, at the givendrain voltage for the particular cell structure, and at the same timekeep the drain current at a low value during programming. For a flashmemory cell having a programming drain current of 1 micro-ampere/cell, agate coupling capacitance of C_(G)=1 femto-Farad, and a gate injectionefficiency as high as 10⁻⁴ for the band-to-band electron injectionprocess, the ramp rate for the wordline voltage is about 0.1volt/microsecond. The simulated potential distribution for the writecondition illustrated in FIG. 3A and FIG. 3B shows that the structureand applied conditions selected to provide the necessary total potentialdrop of over 4 volts and a high vertical electric field in the deepdepletion region near the drain of the cell to sustain a high efficiencyinjection. This results in a program time equal to 30 μs (micro-seconds)for the page write function as defined in Table 1. For a practicalimplementation having conditions similar to those described in Table 1,page write times are in the range of 10 microseconds to 1 millisecond.

An example for the bias conditions for the basic memory functions isprovided in Table 1.

TABLE 1 Function V_(S) V_(D) V_(F) V_(G) (A/μm I_(DS)) Read 1 0 1 3 54.17E-04 Write start 2 4 4.5 7.5 8.87E-13 FIG. 3 Write end 2 4 4.5 10.58.87E-13 FIG. 3 Margin 0 0 1 2 6.333333 2.43E-06 Wrt dsturb 2 4 <2.5 0<1E-30 Erase float 4 to 6 −10 to −6 −8 to −12 N/A Recovery 2 4 4.5 0 to7.5 8.87E-13 FIG. 3

The I_(DS) values for cell or channel current in relevant memoryfunctions, and the two-dimensional potential distribution in write (FIG.3) have been calculated by computer simulation for the physical cellstructure in FIG. 1. The floating gate was assumed to be neutral for theread 1 (erased) and write start conditions above.

Since the embodiments of this cell form the basis for a new approach toflash EEPROM memory, the embodiments also support the electrical erasefunction. The electrical erase function is accomplished as in standardflash EEEPROM devices for a group of cells in the memory array (eraseblock). As described above, a positive voltage of between about 4 voltsand about 6 volts and negative voltage of about −10 volts aresimultaneously applied to the drains (bitlines) of all the memory cellsin the erase block and, respectively, all the word lines in the eraseblock. Such an erase function takes between about 10 milliseconds and afew seconds to complete, which is within the range of erase timesdescribed in the specifications of standard memory devices.Alternatively, a channel erase mode is implemented by applying a highernegative voltage of between about −16 volts and about −20 volts on allword lines in the block, or any combination of a negative voltage on theword lines and a positive voltage on the P well surrounding all thecells in the block.

The embodiments of this flash cell, like the flash cell used in thecurrent standard flash memory, make the memory operation susceptible toovererasure. Such overerasure, as in the current standard flashmemories, may induce a read 0 failure due to the column leakage createdby overerased cells. Also, an over erased cell may conduct a much highercurrent in the programming function than the value shown in Table 1,thus overloading the current supply for a page write operation. To avoidovererasure, the standard erase pulse and verify algorithm are used forthe block erase function. Also, a specific recovery method for a smallnumber of over erased cells per block is available. This recovery methodis essentially identical to a ramped write function with a lower range,about 0 volts to about 7 volts, for the wordline voltage and a slowerramp rate, on the order of about 1 to about 10 milliseconds for theentire ramp. The voltage range of the ramped write function avoidsprogramming the cells to a higher threshold. This function can besimultaneously applied to all cells in an erase block, given thetypically low number of overerased cells and the reduced current percell due to the lower ramp rate.

The present invention provides a flash memory cell for use innon-volatile storage devices. In an exemplary embodiment, the flashmemory cell comprises a gate, a drain, and a source, all in a commonsubstrate. The flash memory is capable of being programmed at near-zerochannel current by inducing a voltage drop of between about four voltsand about six volts across a shallow deep-depletion region in thechannel by applying a first voltage to the gate, and a second voltage tothe drain and a third voltage to the source.

FIG. 4 is a schematic diagram 400 of non-volatile memory device 100 ofFIG. 1, illustrating the program and erase modes of operation of flashmemory cell 103. As in FIG. 1, flash memory cell 103 includes source112, drain 115, and control gate 154. Flash memory cell 103 isprogrammed by coupling first voltage 403 to the control gate 154,coupling second voltage 406 to the drain 115 and third voltage 409 tothe source 112. In the programming mode of operation, first voltage 403is greater than second voltage 406, which is greater than third voltage409. In the preferred programming mode of operation, first voltage 403is ramped between 7 and 11 volts, second voltage is about 4 volts andthird voltage 409 is about 2 volts.

An advantage of this cell structure and bias scheme in programmingoperation for the flash memory cell 103 is that programming is achievedusing relatively low voltage and power. Programming memory cells usinglow power permits the design of a high performance computer systemincorporating a large amount of flash memory without significantlyincreasing the size of the system power supply to support theprogramming of the flash memory.

Programming flash memory cell 103 causes charge to accumulate onfloating gate 148. The accumulation of charge causes an increase in theturn-on voltage threshold of flash memory cell 103. This increase in theturn-on voltage threshold of flash memory cell 103 prevents a readsignal applied to control gate 154 from turning on flash memory cell103, and thus a logical zero is detected by the read sense amplifier.

Flash memory cell 103 is erased by floating source 112, coupling firstvoltage 403 to control gate 154 and coupling second voltage 406 to drain115. In the preferred erase mode of operation, first voltage 403 is inthe range −8 volts to −12 volts (to be applied to the control gate 154)and second voltage 406 is in the range 4 volts to 6 volts (to be appliedto the drain 115). Erasing flash memory cell 103 causes the removal ofthe charge that accumulated on floating gate 148 of flash memory cell103 during a programming operation. Erasing flash memory cell 103 alsocauses a decrease in the turn-on voltage threshold of memory cell 103and a logical one to be stored by memory cell 103. By decreasing theturn-on voltage threshold of memory cell 103, a read signal applied tocontrol gate 154 causes memory cell 103 to switch on during a readoperation, which results in a logical one being detected by the senseamplifier during a read operation.

FIG. 5 is a graph 500 of ramped control gate voltage signal 503. Graph500 includes x-axis 506, y-axis 509, and ramped control gate voltagesignal 503. The x-axis 506 shows time increasing. The y-axis 409 showsgate voltage (V_(G)) increasing. Gate voltage (V_(G)) has the units ofvolts. As described above, in the preferred embodiment of theprogramming mode of operation, control gate voltage signal 503 is rampedfrom about 7.5 volts to about 10.5 volts. The equation shown belowdefines the relationship between the rate of change of the ramped gatevoltage signal (V_(G)) 503, injection current (I_(F)) 512, and controlgate to floating gate capacitance (C_(G)) 515.$\frac{V_{G}}{t} = {\frac{1}{C_{G}}I_{F}}$

The rate of change of the ramped gate voltage signal 503 is proportionalto injection current 160 shown in FIG. 1. The preferred proportionalityconstant is the reciprocal of the control gate to floating gatecapacitance 515. Ramping control gate voltage signal 503 at a slowerrate increases the time to charge floating gate 148 of FIG. 1. Rampingfirst voltage 403 at control gate 154 at a faster rate exceeds thecharging rate of floating gate 148 and is less efficient in chargingfloating gate 148.

FIG. 6 is a block diagram of a computer system suitable for use inconnection with the present invention. Referring to FIG. 6, a blockdiagram of a system level embodiment of the present invention is shown.System 600 comprises processor 605 and memory device 610, which includesnon-volatile memory device structures of one or more of the typesdescribed above in conjunction with FIGS. 1-5. Memory device 610comprises memory array 615, address circuitry 620, and read circuitry630, and is coupled to processor 605 by address bus 635, data bus 640,and control bus 645. Processor 605, through address bus 635, data bus640, and control bus 645 communicates with memory device 610. In a readoperation initiated by processor 605, address information, datainformation, and control information are provided to memory device 610through busses 635, 640, and 645. This information is decoded byaddressing circuitry 620, including a row decoder and a column decoder,and read circuitry 630. Successful completion of the read operationresults in information from memory array 615 being communicated toprocessor 605 over data bus 640.

Conclusion

Several embodiments of a non-volatile memory device for storinginformation have been described. These embodiments permit programming ofnon-volatile memory devices at high speed and low power. Althoughspecific embodiments have been illustrated and described herein, it willbe appreciated by those of skill in the art that any arrangement whichis calculated to achieve the same purpose may be substituted for thespecific embodiment shown. This application is intended to cover anyadaptations or variations of the present invention. Therefore, it isintended that this invention be limited only by the claims and theequivalents thereof.

What is claimed is:
 1. A method of programming a flash memory cellcomprising: applying a voltage between about 1 volt and about 2.5 voltson a source line to a source region, the source region formed in acommon substrate of the flash memory cell along with a drain region, achannel region, and a control gate, the source region having an arsenicdoped region, the source region being surrounded by a heavily dopedboron region; and generating a voltage of more than about four voltsacross a depletion region in the channel region.
 2. The method of claim1, wherein generating a voltage of more than about four volts across thedepletion region in the channel region comprises: applying a firstvoltage to the control gate; and applying a second voltage less than thefirst voltage to the drain region.
 3. The method of claim 2, whereinapplying a first voltage to the control gate comprises applying about7.5 volts.
 4. The method of claim 2, wherein applying a first voltage tothe control gate comprises applying about 10.5 volts.
 5. The method ofclaim 2, wherein applying a second voltage less than the first voltageto the drain region comprises applying about 4 volts.
 6. The method ofclaim 2, wherein applying a first voltage to the control gate, andapplying a second voltage less than the first voltage to the drainregion comprises applying a voltage to the control gate and a voltage tothe drain region such that the depletion region extends about 0.1microns in the channel region.
 7. A method of programming a flash memorycell comprising: applying a voltage between about 1 volt and about 2.5volts on a source line to a source region, the source region formed in acommon substrate of the flash memory cell along with a drain region, achannel region, and a control gate; applying a voltage on a bitlinecoupled to the drain region, the voltage on the bitline being aboutequal to the voltage applied to the source line; and generating avoltage of more than about four volts across a depletion region in thechannel region.
 8. The method of claim 7, wherein generating a voltageof more than about four volts across a depletion region in the channelregion comprises applying a voltage to the control gate, wherein thevoltage to the control gate is greater than the voltage on the bitline.9. A method of programming a flash memory cell comprising: applying avoltage between about 1 volt and about 2.5 volts on a source line to asource region, the source region formed in a common substrate of theflash memory cell along with a drain region, a channel region, and acontrol gate, the source region being surrounded by a heavily dopedp-type region; and generating a voltage of more than about four voltsacross a depletion region in the channel region.
 10. The method of claim9, wherein generating a voltage of more than about four volts across adepletion region in the channel region comprises: applying a firstvoltage to the control gate; and applying a second voltage less than thefirst voltage to the drain region.
 11. A method of programming a flashmemory cell comprising: applying a voltage between about 1 volt andabout 2.5 volts on a source line to a source region, the source regionformed in a common substrate of the flash memory cell along with a drainregion, a channel region, and a control gate, the source region beingsurrounded by a heavily doped p-type region; applying a voltage on abitline coupled to the drain region, the voltage on the bitline beingabout equal to the voltage on the source line; and generating a voltageof more than about four volts across a depletion region in the channelregion.
 12. The method of claim 11, wherein generating a voltage of morethan about four volts across a depletion region in the channel regioncomprises applying a voltage to the control gate wherein the voltage tothe control gate is greater than the voltage on the bitline.
 13. Amethod of programming a flash memory cell comprising: applying a voltagebetween about 1 volt and about 2.5 volts on a source line to a sourceregion, the source region formed in a common substrate of the flashmemory cell along with a drain region, a channel region, and a controlgate, the source region being surrounded by a heavily doped boronregion, the drain region having an arsenic region surrounded by aphosphorous region, the drain region abutting a lightly doped boronregion; and generating a voltage of more than about four volts across adepletion region in the channel region.
 14. The method of claim 13,wherein generating a voltage of more than about four volts across adepletion region in the channel region comprises: applying a firstvoltage to the control gate; and applying a second voltage less than thefirst voltage to the drain region.
 15. The method of claim 14, whereinapplying a first voltage to the control gate comprises applying about7.5 volts.
 16. The method of claim 14, wherein applying a first voltageto the control gate comprises applying about 10.5 volts.
 17. A method ofprogramming a flash memory cell comprising: applying a voltage betweenabout 1 volt and about 2.5 volts on a source line to a source region,the source region formed in a common substrate of the flash memory cellalong with a drain region, a channel region, and a control gate, thesource region having an arsenic region surrounded by a heavily dopedboron region, the drain region having an arsenic region surrounded by aphosphorous region, the drain region abutting a lightly doped boronregion; applying a voltage on a bitline coupled to the drain region, thevoltage on the bitline being about equal to the voltage on the sourceline; and generating a voltage of more than about four volts across adepletion region in the channel region.
 18. The method of claim 17,wherein generating a voltage of more than about four volts across adepletion region in the channel region comprises applying a voltage tothe control gate wherein the voltage to the control gate is greater thanthe voltage on the bitline.
 19. A flash memory cell comprising: a sourceregion, the source region having a heavily doped arsenic regionsurrounded by a heavily doped boron region; a drain region, the drainregion having a heavily doped arsenic region surrounded by a phosphorousregion, the drain region abutting a lightly doped boron region; achannel region, the channel region having a surface, the surfaceextending from the source region to the drain region; and a control gateformed in a common substrate with the source region, the drain region,and the channel region, wherein the flash memory cell is capable ofbeing programmed by applying a voltage between about 1 volt and about2.5 volts on a source line to the source region, and generating avoltage of more than about four volts across a depletion region in thechannel region.
 20. The flash memory cell of claim 19, wherein thephosphorous region has a phosphorous concentration of about 10¹⁹atoms/cm^(3.)
 21. The flash memory cell of claim 14, wherein the lightlydoped boron region has a doping concentration of about 2×10¹⁷atoms/cm^(3.)
 22. The flash memory cell of claim 19, wherein the heavilydoped arsenic region is formed by implanting arsenic to a depth of about0.1 micron at a density of about 1×10²⁰ atoms/cm^(3.)
 23. A flash memorycell comprising: a source region, the source region having a heavilydoped arsenic region surrounded by a heavily doped boron region; a drainregion, the drain region having a heavily doped arsenic regionsurrounded by a phosphorous region, the drain region abutting a lightlydoped boron region; a channel region, the channel region having asurface, the surface extending from the source region to the drainregion, the channel region having a heavily boron doped buried channelseparated from the surface by a lightly doped boron region; and a stack,the stack formed in a common substrate with the source region, the drainregion, and the channel region, the stack having a control gate, a gatedielectric, a floating gate, and an oxide layer, the stack located abovethe channel region, wherein the flash memory cell is capable of beingprogrammed by applying a voltage between about 1 volt and about 2.5volts on a source line to the source region, and generating a voltage ofmore than about four volts across a depletion region in the channelregion.
 24. The flash memory of claim 23, wherein the heavily borondoped buried channel extends from the source region to a distance ofabout 0.14 microns from the drain region.
 25. The flash memory of claim23, wherein the oxide layer comprises a thermal oxide, the oxide layerformed on the surface of the channel region, the oxide layer having athickness of between about 80 angstroms and about 120 angstroms.
 26. Theflash memory of claim 23, wherein the gate dielectric is formed on tothe floating gate, the gate dielectric having a thickness of about 200angstroms.
 27. A processing system comprising: a processor; and a memorycoupled to the processor, the memory having a plurality of flash memorycells, the plurality of flash memory cells arranged in rows in thememory, each of the plurality of flash memory cells having a controlgate, a drain region, a source region, and a channel region formed in acommon substrate, the source region having an arsenic doped region, thesource region being surrounded by a heavily doped boron region, whereineach of the plurality of flash memory cells is capable of beingprogrammed by applying a voltage between about 1 volt and about 2.5volts on a source line to the source region of each of the plurality offlash memory cells, and generating a voltage of more than about fourvolts across a depletion region in the channel region of each of theplurality of flash memory cells.